n-channel enhancement mode mosfet copyright ? anpec electronics corp. rev. a.1 - oct., 2002 www.anpec.com.tw 1 anpec reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. apm2014n pin description ordering and marking information features applications ? 20v/30a , r ds(on) =12m ? (typ.) @ v gs =4.5v r ds(on) =18m ? (typ.) @ v gs =2.5v ? ? ? ? ? super high dense cell design for extremely low r ds(on) ? ? ? ? ? reliable and rugged ? ? ? ? ? to-252 package ? power management in computer, portable equipment and battery powered systems. top view of to-252 g ds 123 apm2014n handling code temp. range package code package code u : to-252 operation junction temp. range c :-55 to 150 c handling code tr : tape & reel apm2014n u : xxxxx - date code apm2014n xxxxx absolute maximum ratings (t a = 25 c unless otherwise noted) symbol parameter rating unit v dss drain-source voltage 20 v gss gate-source voltage 16 v
copyright ? anpec electronics corp. rev. a.1 - oct., 2002 www.anpec.com.tw 2 apm2014n symbol parameter rating unit i d * maximum drain current ? continuous 30 i dm maximum drain current ? pulsed 50 a t a =25 c 50 p d maximum power dissipation t a =100 c 10 w t j maximum junction temperature 150 c t stg storage temperature range -55 to 150 c r ja thermal resistance ? junction to ambient 50 c/w * surface mounted on fr4 board, t 10 sec. apm2014n s y mbol parameter test condition min. typ. max. unit static bv dss drain-source breakdown voltage v gs =0v , i ds =250 a 20 v i dss zero gate voltage drain current v ds =18v , v gs =0v 1 a v gs(th) gate threshold voltage v ds =v gs , i ds =250 a 0.6 1.5 v i gss gate leakage current v gs = 16v , v ds =0v 100 na v gs =4.5v , i ds =10a 12 14 r ds(on) a drain-source on-state resistance v gs =2.5v , i ds =5a 18 22 m ? v sd a diode forward voltage i sd =4a , v gs =0v 0.6 1.3 v dynamic b q g total gate charge 18.2 24 q gs gate-source charge 5.6 q gd gate-drain charge v ds =10v , i ds = 5a v gs =4.5v , 4.8 nc t d(on) turn-on delay time 10 20 t r turn-on rise time 15 22 t d(off) turn-off delay time 28 42 t f turn-off fall time v dd =10v , i ds =1a , v gen =4.5v , r g =0.2 ? 17 25 ns c iss input capacitance 1210 c oss output capacitance 300 c rss reverse transfer capacitance v gs =0v v ds =15v frequency=1.0mhz 210 pf electrical characteristics (t a = 25 c unless otherwise noted) absolute maximum ratings (cont.) (t a = 25 c unless otherwise noted) notes a : pulse test ; pulse width 300 s, duty cycle 2 % b : guaranteed by design, not subject to production testing
copyright ? anpec electronics corp. rev. a.1 - oct., 2002 www.anpec.com.tw 3 apm2014n 0 5 10 15 20 0.000 0.005 0.010 0.015 0.020 0.025 0.030 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 012345678 0 5 10 15 20 25 30 typical characteristics 2.5v i d- drain current (a) transfer characteristics t j =-55c t j =25c t j =125c v gs - gate-to-source voltage (v) threshold voltage vs. junction temperature tj - junction temperature (c) v gs(th)- threshold voltage (v) (normalized) i ds =250ua r ds(on) -on-resistance ( ? ) on-resistance vs. drain current i d - drain current (a) v gs =4.5v output characteristics i d -drain current (a) v gs =4,5,6,7,8,9,10v 2v v ds - drain-to-source voltage (v) v gs =2.5v 3v
copyright ? anpec electronics corp. rev. a.1 - oct., 2002 www.anpec.com.tw 4 apm2014n 048121620 0 300 600 900 1200 1500 1800 2100 0 5 10 15 20 25 30 35 0 2 4 6 8 10 -50-25 0 255075100125150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 12345678910 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 typical characteristics v gs - gate-to-source voltage (v) r ds(on) -on-resistance ( ? ) i d =10a on-resistance vs. gate-to-source voltage r ds(on) -on-resistance ( ? ) (normalized) on-resistance vs. junction temperature v gs =4.5v i d =10a t j - junction temperature (c) v ds - drain-to-source voltage (v) capacitance capacitance (pf) ciss coss crss gate charge q g - gate charge (nc) v gs -gate-source voltage (v) v ds =4.5v i d =5a frequency=1mhz
copyright ? anpec electronics corp. rev. a.1 - oct., 2002 www.anpec.com.tw 5 apm2014n 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 30 1e-4 1e-3 0.01 0.1 1 10 100 1000 0.01 0.1 1 single pulse d=0.01 d=0.02 d=0.05 d=0.1 d=0.2 duty cycle=0.5 source-drain diode forward voltage i s -source current (a) t j =150c t j =25c v sd -source-to-drain voltage (v) typical characteristics power (w) single pulse power time (sec) square wave pulse duration (sec) normalized effective transient thermal impedance normalized thermal transient impedence, junction to ambient 1.duty cycle, d=t1/t2 2.per unit base=r thja =50c/w 3.t jm -t a =p dm z thja 1e-3 0.01 0.1 1 10 100 1000 0 50 100 150 200 250
copyright ? anpec electronics corp. rev. a.1 - oct., 2002 www.anpec.com.tw 6 apm2014n to-252( reference jedec registration to-252) millimeters inches dim min. max. min. max. a 2.18 2.39 0.086 0.094 a1 0.89 1.27 0.035 0.050 b 0.508 0.89 0.020 0.035 b2 5.207 5.461 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.334 6.22 0.210 0.245 e 6.35 6.73 0.250 0.265 e1 3.96 5.18 0.156 0.204 h 9.398 10.41 0.370 0.410 l 0.51 0.020 l1 0.64 1.02 0.025 0.040 l2 0.89 2.032 0.035 0.080 l2 d l1 b b2 e c1 a h l c a1 e1 packaging information
copyright ? anpec electronics corp. rev. a.1 - oct., 2002 www.anpec.com.tw 7 apm2014n reflow condition (ir/convection or vpr reflow) physical specifications pre-heat temperature 183 c peak temperature time temperature classification reflow profiles convection or ir/ convection vpr average ramp-up rate(183 c to peak) 3 c/second max. 10 c /second max. preheat temperature 125 25 c) 120 seconds max temperature maintained above 183 c 60 ? 150 seconds time within 5 c of actual peak temperature 10 ?20 seconds 60 seconds peak temperature range 220 +5/-0 c or 235 +5/-0 c 215-219 c or 235 +5/-0 c ramp-down rate 6 c /second max. 10 c /second max. time 25 c to peak temperature 6 minutes max. package reflow conditions pkg. thickness 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume 350 mm3 pkg. thickness < 2.5mm and pkg. volume < 350mm3 convection 220 +5/-0 c convection 235 +5/-0 c vpr 215-219 c vpr 235 +5/-0 c ir/convection 220 +5/-0 c ir/convection 235 +5/-0 c terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb) lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3.
copyright ? anpec electronics corp. rev. a.1 - oct., 2002 www.anpec.com.tw 8 apm2014n carrier tape & reel dimensions a pp lication a b c j t1 t2 w p e 330 3100 213 0. 5 2 0.5 16.4 + 0.3 -0.2 2.5 0.5 16+ 0.3 - 0.1 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t to-252 7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05 a j b t2 t1 c t ao e w po p ko bo d1 d f p1 test item method description solderability mil-std-883d-2003 245c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125c pct jesd-22-b, a102 168 hrs, 100% rh, 121c tst mil-std 883d-1011.9 -65c ~ 150c, 200 cycles reliability test program
copyright ? anpec electronics corp. rev. a.1 - oct., 2002 www.anpec.com.tw 9 apm2014n customer service anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 cover tape dimensions application carrier width cover tape width devices per reel to- 252 16 13.3 2500
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